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日期	題名	作者
2004	GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates	LaRoche,JR; Luo,B; Ren,F; Baik,KH; Stodilka,D; Gila,B; Abernathy,CR; Pearton,SJ; Usikov,A; Tsvetkov,D; Soukhoveev,V; Gainer,G; Rechnikov,A; Dimitriev,V; Chen,GT; Pan,CC; Chyi,JI
2004	High linearity InGaP/GaAs power HBTs by collector design	Wang,CM; Hsu,HT; Shu,HC; Hsin,YM
2004	High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes	Chen,GT; Pan,CC; Fang,CS; Huang,TC; Chyi,JI; Chang,MN; Huang,SB; Hsu,JT
2004	Impact of ionospheric scintillations on LEO satellite DS-CDMA communication system	Li,SY; Liu,CH
2004	Improved CMOS microwave linearity based on the modified large-signal BSIM model	Lai,HH; Hsiao,CC; Kuo,CW; Chan,YJ; Sato,T
2004	Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors	Hwu,MJ; Chju,HC; Yang,SC; Chan,YJ; Chang,LB
2004	InGaN-GaN MQW LEDs with current blocking layer formed by selective activation.	Lee,CM; Chuo,CC; Liu,YC; Chen,IL; Chyi,JI
2004	K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology	Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chiou,HK; Chan,YJ
2004	Low damage, Cl-2-based gate recess etching for 0.3-mu m gate-length AlGaN/GaN HEMT fabrication	Wang,WK; Li,YJ; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI
2004	Low power and cost effective VLSI design for an MP3 audio decoder using an optimised synthesis-subband approach	Tsai,TH; Yang,YC

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