An epitaxial single-crystalline Si layer, 715 nm thick, was transferred onto quartz by wafer bonding and diffused-hydrogen ion cutting below 180 degrees C. A sharp interface for trapping hydrogen atoms was created by the epitaxial growth of an undoped silicon layer on top of a boron/germanium-doped silicon layer. An interfacial hydrogen concentration of 1.5 x 10(22) cm(-3) was achieved by exposure to an atmospheric-pressure plasma. Following annealing at 180 degrees C and subsequent mechanically induced crack propagation at room temperature, a smooth (root-mean-square = 1.14 nm), damage-free silicon layer was transferred onto quartz. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3231136] All rights reserved.
