Low Stress Silicon Layer Transfer onto Quartz Through Hydrogen Capture within Si (B/Ge) Buried Layer

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Title:	Low Stress Silicon Layer Transfer onto Quartz Through Hydrogen Capture within Si (B/Ge) Buried Layer
Authors:	Huang,CH;Ho,CC;Jeng,SC;Lee,TH
Contributors:	機械工程研究所
Keywords:	WAFERS;CUT
Date:	2009
Issue Date:	2010-06-29 18:02:09 (UTC+8)
Publisher:	中央大學
Abstract:	An epitaxial single-crystalline Si layer, 715 nm thick, was transferred onto quartz by wafer bonding and diffused-hydrogen ion cutting below 180 degrees C. A sharp interface for trapping hydrogen atoms was created by the epitaxial growth of an undoped silicon layer on top of a boron/germanium-doped silicon layer. An interfacial hydrogen concentration of 1.5 x 10(22) cm(-3) was achieved by exposure to an atmospheric-pressure plasma. Following annealing at 180 degrees C and subsequent mechanically induced crack propagation at room temperature, a smooth (root-mean-square = 1.14 nm), damage-free silicon layer was transferred onto quartz. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3231136] All rights reserved.
Relation:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Appears in Collections:	[Graduate Institute of Mechanical Engineering] journal & Dissertation

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