Low Stress Silicon Layer Transfer onto Quartz Through Hydrogen Capture within Si (B/Ge) Buried Layer

NCU Institutional Repository > 工學院 > 機械工程研究所 > 期刊論文 > Item 987654321/26872

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/26872

题名:	Low Stress Silicon Layer Transfer onto Quartz Through Hydrogen Capture within Si (B/Ge) Buried Layer
作者:	Huang,CH;Ho,CC;Jeng,SC;Lee,TH
贡献者:	機械工程研究所
关键词:	WAFERS;CUT
日期:	2009
上传时间:	2010-06-29 18:02:09 (UTC+8)
出版者:	中央大學
摘要:	An epitaxial single-crystalline Si layer, 715 nm thick, was transferred onto quartz by wafer bonding and diffused-hydrogen ion cutting below 180 degrees C. A sharp interface for trapping hydrogen atoms was created by the epitaxial growth of an undoped silicon layer on top of a boron/germanium-doped silicon layer. An interfacial hydrogen concentration of 1.5 x 10(22) cm(-3) was achieved by exposure to an atmospheric-pressure plasma. Following annealing at 180 degrees C and subsequent mechanically induced crack propagation at room temperature, a smooth (root-mean-square = 1.14 nm), damage-free silicon layer was transferred onto quartz. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3231136] All rights reserved.
關聯:	ELECTROCHEMICAL AND SOLID STATE LETTERS
显示于类别:	[機械工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	517	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing