non;Defect formation on graphene by carbon ion implantation

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题名:	non;Defect formation on graphene by carbon ion implantation
作者:	黃偉智;Huang, Wei-Jhih
贡献者:	物理學系
关键词:	石墨烯;缺陷;離子佈植;拉曼;二氧化矽;氮化傢;Graphene;defect;ion implantation;Raman;SiO2;GaN
日期:	2018-07-23
上传时间:	2018-08-31 13:57:20 (UTC+8)
出版者:	國立中央大學
摘要:	近年來，許多不同的碳相關結構形態，如奈米碳管、富勒烯…，已經被發掘並且研究其特性。其中，由於石墨烯的種種優越特性，引起科學家的研究熱潮。它已經被嘗試做成半導體元件並且有廣泛的應用，包含單分子氣體偵測、場效電晶體、太陽能電池、發光二極體、觸控面板…等等。然而，在製造過程中，任何材料的缺陷形成是無可避免的。它們能夠劇烈地影響材料的電性、機械性、熱性及化學性質。因此，了解缺陷形成的機制以及穩定地控制缺陷是歷久不衰也是相當重要的課題之一。根據石墨烯的固有特性，它並不存在能隙。藉由缺陷的產生，能隙可以被打開並且鍵結許多不同元素使其成為N型或P型半導體。儘管科學家已經研究石墨烯將近數十年，許多缺陷的形成機制以及控制依然不夠完善。因此，在此研究中，我們將藉由佈植不同濃度的碳離子，人工地製造缺陷於石墨烯上，並且探討石墨烯於二氧化矽(SiO2) 及氮化鎵(n-GaN) 基板上的缺陷形成機制以及熱退火後的特性。藉由佈植不同的基板，我們可以瞭解基板的散射原子以及破壞的基板表層對於石墨烯的特性影響。此外，基於不同樣品會因為製作與轉制方法、晶粒邊界、皺褶、吸附氣體多寡…等等，而擁有不同的原始特性。因此，我們也研究了石墨烯的特性是否能夠重現於相同處理條件下而不同的樣品中。有鑑於穩定的控制石墨烯特性是製作元件相當重要的課題。在工業上，這將是一項相當有幫助的研究。;In recent years, a variety of carbon-related materials, such as carbon nanotubes, fullerene…, etc, has been discovered and the properties has been investigated. One of them, well-known graphene, attracts the interest in scientists and lift a burst of whirlwind due to the fantastic characteristics. It has been adopted for semiconductor device and has a wide range of applications including single molecule gas sensor, field effects transistors (FETs), solar cell, light-emitting diodes (LED), touch panels and so on. Nevertheless, defect formation on various materials is inevitable during fabrication process, which can dramatically influence the electronic, mechanical, thermal or chemical property. Hence, understanding the mechanism of defect formation and stably controlling defect is an enduring substantial issue. According to the intrinsic properties, graphene is not equipped with band gap. By production of defect, band gap of graphene can be opened and then become n-type or p-type semiconductor by binding with different dopants. Despite of many researches on graphene for decades, the mechanism of defect formation and the technique of controlling defect is still not quite complete. In this literature, we will artificially produce defect on supported graphene by implanting carbon ions at different doping concentration, and discuss the intrinsic, as-implanted and post-annealing properties on silicon dioxide (SiO2) and gallium nitride (n-GaN) substrates. Comparing with different substrates, we can investigate the influence of supporting atoms and the rough surface on graphene. Furthermore, intrinsic properties of each sample is different from one to another, based on method to fabricating and transferring and amount of grain boundary, corrugations, absorption of gas and so on. Thus, we demonstrate the reproduction ability of graphene characteristics under the same processing and conditions. Corresponding to substantially important topic of stably controlling the properties of graphene in semiconductor devices, this is an advantageous research in industry.
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