以中子照射摻雜n-型矽半導體已經是相當成熟的技術，並已經實際應用於矽晶片以及高功率矽半導體元件上。在鍺、砷化鎵、磷化鎵材料上，也有相當的研究。 中子質化比起目前廣泛被使用的離子佈植技術，雖沒有可以植入多種離子的優點，但是因為具有更均勻的摻雜特性，在特定的製程部份，也應用的相當廣泛，是一種極為成熟的商用化技術。 中子質化在砷化鎵半導體材料的應用方面，則尚在研究階段。本篇論文即針對氮化鎵半導體材料在經過中子質化後的物理性質（尤其是電性、光性）及缺陷結構（defect及complex型態）等方面之物理機制加以分析探討。 Neutron-Transmutation-Doping (NTD) is a method that transfers several percent of Ga in GaN to become Ge, as the n+dopant. As we compare the doping processes of ion-implantation, diffusion or doping while growing the samples, NTD have the advantage of depth profile uniformity. The field of neutron transmutation doping has been reported in Si, Ge, GaAs, and GaP. To my knowledge, the experiment of NTD GaN has not be studied. The PL results of neutron transmutation doped GaN show that the band-gap emission disappeared, and a 426nm peak similar to the spectrum of p-type GaN appeared. Hall measurement shows that the electron concentration increases, and the mobility reduces. NTD also induces the increases of GaN resistivity. To compare the difference of damage induced by NTD process, we use proton ion implanted GaN. The defect, damage, and the thermal annealing effect of GaN with NTD process will be discussed.
