本論文利用光調製反射光譜與光激發螢光光譜來分析氧硒化鋅合金的直接能隙，氧濃度為0~0.07。在室溫下，能隙隨著氧濃度上升會大幅度地縮小，此結果符合能帶互斥理論。在溫度150~300K的範圍內，由能帶互斥理論推算出的氧濃度與X光繞射實驗的結果相近。然而，在低溫10~150K的範圍內，出現了能隙隨溫度變化趨勢增大的現象，變化趨勢往主材料硒化鋅接近，而偏離了能帶互斥理論。實驗結果在低溫偏離能帶互斥理論的現象，可能與氧硒化鋅合金之局域態特性所造成的影響有關。 This thesis mainly focuses on the direct band gap analysis of ZnSe1-xOx alloys (x=0~0.07) through photoreflectance (PR) spectroscopy and photoluminescence (PL) spectroscopy. The band gap of alloys decreases significantly with increasing oxygen concentration at room temperature, which agrees with the band anticrossing model (BAC). In higher temperature range (150~300K), the BAC model well predicts the oxygen concentration which consists with experimental results under X-Ray diffraction (XRD) examination. However, when the temperature is under 150K, BAC model underestimates the drastic band gap tendency which is closer to the behavior of the host material ZnSe. This deviation from BAC model may associate with the localized state properties of ZnSe1-xOx alloys.
