Low turn-on voltage and high-current InP/In0.37Ga0.63As0.89Sb0.11/In(0.53)Ga(0.47)AS double heterojunction bipolar transistors

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Title:	Low turn-on voltage and high-current InP/In0.37Ga0.63As0.89Sb0.11/In(0.53)Ga(0.47)AS double heterojunction bipolar transistors
Authors:	Chen,Shu-Han;Teng,Kuo-Hung;Chen,Hsin-Yuan;Wang,Sheng-Yu;Chyi,Jen-Inn
Contributors:	電機工程研究所
Keywords:	GHZ;DHBTS
Date:	2008
Issue Date:	2010-07-06 18:13:19 (UTC+8)
Publisher:	中央大學
Abstract:	We report on the de and microwave characteristies Of an InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In0.37Ga0.63As0.89Sb0.11 base reduces the conducti
Relation:	IEEE ELECTRON DEVICE LETTERS????
Appears in Collections:	[電機工程研究所] 期刊論文

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