Strained-Si with carbon incorporation for MOSFET source/drain engineering

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29789

Title:	Strained-Si with carbon incorporation for MOSFET source/drain engineering
Authors:	Lee,M. H.;Chang,S. T.;Lee,S. W.;Chen,P. S.;Shen,K. -W.;Wang,W. -C.
Contributors:	材料科學與工程研究所
Keywords:	SILICON
Date:	2008
Issue Date:	2010-07-06 15:58:03 (UTC+8)
Publisher:	中央大學
Abstract:	The carbon incorporation in strained- Si source/ drain of MOSFET is demonstrated. The methylsilane (CH3SiH3) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D-i
Relation:	APPLIED SURFACE SCIENCE??
Appears in Collections:	[材料科學與工程研究所 ] 期刊論文

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