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Effect of temperature on CO detecti...
The doping process of p-type GaN fi...
Optical properties in InGaN/GaN mul...
Microstructural evolution in a mult...
Low-operation voltage of InGaN/GaN ...
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Showing items 31-40 of 85. (9 Page(s) Totally)
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Date
Title
Authors
2005
Grating decay in reduced barium titanate crystals
Huang,CY
;
Chang,JY
2005
Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy
Pan,CJ
;
Tu,CW
;
Song,JJ
;
Cantwell,G
;
Lee,CC
;
Pong,BJ
;
Chi,GC
2005
Realization of free-space optical pickup head with stacked Si-based phase elements
Chang,JY
;
Wang,CM
;
Lee,CC
;
Shih,HF
;
Wu,ML
2004
Enhanced radiative efficiency in blue (In,Ga)N multiple-quantum-well light-emitting diodes with an electron reservoir layer
Takahashi,Y
;
Satake,A
;
Fujiwara,K
;
Shue,JK
;
Jahn,U
;
Kostial,H
;
Grahn,HT
2004
Method for producing coded micro-carrier and test method by using a novel type biochip
Chang,RS
;
Lee,DY
;
Chen,WY
;
Huang,RN
;
Huang,HY
;
Hsu,JH
;
Lin,PL
2004
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact
Chang,SJ
;
Chang,CS
;
Su,YK
;
Chuang,RW
;
Lai,WC
;
Kuo,CH
;
Hsu,YP
;
Lin,YC
;
Shei,SC
;
Lo,HM
;
Ke,JC
;
Sheu,JK
2004
Nitride-based near-ultraviolet LEDs with an ITO transparent contact
Kuo,CH
;
Chang,SJ
;
Su,Y
;
Chuang,RW
;
Chang,CS
;
Wu,LW
;
Lai,WC
;
Chen,JF
;
Sheu,J
;
Lo,HM
;
Tsai,JM
2004
Reflection property of nano-acoustic wave at the air/GaN interface
Hsieh,CL
;
Lin,KH
;
Wu,SB
;
Pan,CC
;
Chyi,JI
;
Sun,CK
2003
Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
Li,YL
;
Gessmann,T
;
Schubert,EF
;
Sheu,JK
2003
Deep level defect in Si-implanted GaN n(+)-p junction
Chen,XD
;
Huang,Y
;
Fung,S
;
Beling,CD
;
Ling,CC
;
Sheu,JK
;
Lee,ML
;
Chi,GC
;
Chang,SJ
Showing items 31-40 of 85. (9 Page(s) Totally)
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